 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| trenchfet power mosfets: 1.8-v rated new powerpak package ? low thermal resistance, r thjc ? low 1.07-mm profile load switch power switch pa switch SI7405DN vishay siliconix new product document number: 71424 s-03310?rev. a, 26-mar-01 www.vishay.com 1 p-channel 12-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) 0.016 @ v gs = ?4.5 v ?13 ?12 0.022 @ v gs = ?2.5 v ?11 0.028 @ v gs = ?1.8 v ?9.8 p-channel mosfet dd g s d d s s 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm powerpak 1212-8 bottom view parameter symbol 10 secs steady state unit drain-source voltage v ds ?12 gate-source voltage v gs 8 v a t a = 25 c ?13 ?8.3 continuous drain current (t j = 150 c) a t a = 85 c i d ?9.4 ?6.0 pulsed drain current i dm ?30 a continuous source current (diode conduction) a i s ?3.2 ?1.3 t a = 25 c 3.8 1.5 maximum power dissipation a t a = 85 c p d 2.0 0.8 w operating junction and storage temperature range t j , t stg ?55 to 150 c parameter symbol typical maximum unit t 10 sec 26 33 maximum junction-to-ambient a steady state r thja 65 81 c/w maximum junction-to-case steady state r thjc 1.9 2.4 c/w notes a. surface mounted on 1? x 1? fr4 board. SI7405DN vishay siliconix new product www.vishay.com 2 document number: 71424 s-03310 ? rev. a, 26-mar-01 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 2 ma ? 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = ? 9.6 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 9.6 v, v gs = 0 v, t j = 85 c ? 5 a on-state drain current a i d(on) v ds ? 5 v, v gs = ? 4.5 v ? 30 a v gs = ? 4.5 v, i d = ? 13 a 0.013 0.016 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 11 a 0.018 0.022 ds(on) v gs = ? 1.8 v, i d = ? 3 a 0.022 0.028 forward transconductance a g fs v ds = ? 6 v, i d = ? 13 a 35 s diode forward voltage a v sd i s = ? 3.2 a, v gs = 0 v ? 0.7 ? 1.2 v dynamic b total gate charge q g 35 50 gate-source charge q gs v ds = ? 6 v, v gs = ? 4.5 v, i d = ? 13 a 6.6 nc gate-drain charge q gd 7.7 turn-on delay time t d(on) 25 40 rise time t r v dd = ? 6 v, r l = 6 50 75 turn-off delay time t d(off) v dd = ? 6 v, r l = 6 i d ? 1 a, v gen = ? 4.5 v, r g = 6 175 260 ns fall time t f 150 225 source-drain reverse recovery time t rr i f = ? 3.2 a, di/dt = 100 a/ s 30 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 0 5 10 15 20 25 30 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 30 01234 v gs = 5 thru 2 v 25 c t c = 125 c 1 v ? 55 c 1.5 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d SI7405DN vishay siliconix new product document number: 71424 s-03310 ? rev. a, 26-mar-01 www.vishay.com 3 v sd ? source-to-drain voltage (v) 0.00 0.01 0.02 0.03 0.04 0.05 012345 ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 0 1 2 3 4 5 0 8 16 24 32 40 0.8 0.9 1.0 1.1 1.2 1.3 1.4 ? 50 ? 25 0 25 50 75 100 125 150 0 1000 2000 3000 4000 5000 6000 024681012 c rss c oss c iss v ds = 6 v i d = 13 a v gs = 4.5 v i d = 13 a v gs = 1.8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) t j = 150 c t j = 25 c i d = 13 a 30 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? source current (a) i s v gs = 2.5 v v gs = 4.5 v SI7405DN vishay siliconix new product www.vishay.com 4 document number: 71424 s-03310 ? rev. a, 26-mar-01 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0.01 0 1 40 50 10 600 single pulse power, juncion-t o-ambient time (sec) 30 20 power (w) 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 1 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.1 10 100 ? 0.2 ? 0.1 0.0 0.1 0.2 0.3 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 2 ma threshold voltage variance (v) v gs(th) t j ? temperature ( c) |
Price & Availability of SI7405DN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |